The Effect of IV Characteristics on Optical Control of SDR Si IMPATT Diode

被引：0

作者：

Arshad, T. S. M. ^{[1
]}

Othman, M. A. ^{[1
]}

Hussain, M. N. ^{[1
]}

Rahim, Y. A. ^{[1
]}

机构：

[1] Univ Teknikal Malaysia Melaka UTeM, Ctr Telecommun Res & Innovat CeTRI, Fac Elect & Comp Engn, Microwave Res Grp, Durian Tunggal, Melaka, Malaysia

来源：

ADVANCED COMPUTER AND COMMUNICATION ENGINEERING TECHNOLOGY | 2015年 / 315卷

关键词：

PHOTOCURRENT; DEPENDENCE; HOLE;

D O I：

10.1007/978-3-319-07674-4_9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effect of light incident on the Si SDR IMPATT diode is investigated in this paper. The authors have used an IMPATT diode which is consists of p+, n+ (contact region), n-well region and p-sub region. Since the n-well region is used to be the drift region of the structure, the light is shined on the top of the layer through tiny hole created on the SiO2 layer. The results of the IV characteristics are compared to the dark current condition which no light will be supply on top of the structure. The result of the electric field and mobility in those two conditions are also observed in this paper.

引用

页码：85 / 94

页数：10

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