Metal-insulator transition in V2O3 thin film caused by tip-induced strain

被引：20
|
作者：
Alyabyeva, N. [1 ,3 ]
Sakai, J. [1 ]
Bavencoffe, M. [1 ]
Wolfman, J. [1 ]
Limelette, P. [1 ]
Funakubo, H. [2 ]
Ruyter, A. [1 ]
机构：
[1] Univ Tours, CNRS, INSA CVL, GREMAN,UMR 7347, Parc Grandmont, F-37200 Tours, France
[2] Tokyo Inst Technol, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan
[3] Univ Paris Saclay, CNRS, ISMO, F-91405 Orsay, France
来源：
APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 24期
关键词：
TEMPERATURE; MICROSCOPY;
D O I：
10.1063/1.5063712
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have demonstrated pressure-induced transition in a c-axis oriented vanadium sesquioxide (V2O3) thin film from a strongly correlated metal to a Mott insulator in a submicrometric region by inducing a local stress using contact atomic force microscopy. To have an access to a pressure range of sub-gigapascal, a tip with a large radius of 335nm was prepared by chemical vapour deposition of platinum onto a commercial tip with a focused ion beam (FIB). The FIB-modified tip gives a good electrical contact at low working pressures (0.25-0.4GPa) allowing unambiguously to evidence reversible metal-insulator transition in a pulsed laser-deposited V2O3 thin film by means of local investigations of current-voltage characteristics. A finite element method has confirmed that the diminution of the c/a ratio under this tip pressure explains the observed phase transition of the electron density of states in the film. Published by AIP Publishing.
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页数：4
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