Response of a single trap to AC Negative Bias Temperature Stress

被引：15

作者：

Toledano-Luque, M. ^{[1
,2
]}

Kaczer, B. ^{[2
]}

Roussel, Ph. J. ^{[2
]}

Grasser, T. ^{[3
]}

Wirth, G. I. ^{[4
]}

Franco, J. ^{[2
,5
]}

Vrancken, C. ^{[2
]}

Horiguchi, N. ^{[2
]}

Groeseneken, G. ^{[2
,5
]}

机构：

[1] Univ Complutense Madrid, Dept Appl Phys, E-28040 Madrid, Spain

[2] IMEC, Leuven, Belgium

[3] Tech Univ, Vienna, Austria

[4] Univ Fed Rio Grande Do Sul, Porto Alegre, RS, Brazil

[5] Katholieke Univ Leuven, Leuven, Belgium

来源：

2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2011年

关键词：

Negative Bias Temperature Instability; constant voltage stress; AC stress; MOSFET; reliability; variability; SiON; KINETICS;

D O I：

10.1109/IRPS.2011.5784501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the properties of a single gate oxide trap subjected to AC Bias Temperature Instability (BTI) stress conditions by means of Time Dependent Defect Spectroscopy. A theory for predicting the occupancy of a single trap after AC stress is developed based on first order kinetics and verified on experimental data. The developed theory can be used to develop circuit simulators and predict time dependent variability.

引用

页数：8

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