Spectral-luminescence properties of freestanding porous SiC layers

被引：2

作者：

Gavrilchenko, I., V ^{[1
]}

Milovanov, Y. S. ^{[1
]}

Gryn, S., V ^{[2
]}

Alekseev, S. A. ^{[2
]}

Zaderko, A. N. ^{[1
]}

Shkavro, A. G. ^{[1
]}

Ivanov, I. I. ^{[1
]}

Skryshevsky, V. A. ^{[1
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Inst High Technol, Volodymyrska Str 64, UA-01601 Kiev, Ukraine

[2] Taras Shevchenko Natl Univ Kyiv, Fac Chem, Volodymyrska Str 64, UA-01601 Kiev, Ukraine

来源：

JOURNAL OF LUMINESCENCE | 2021年 / 240卷 / 240期

关键词：

Silicon carbide (SiC); Photoluminescence; Nanocrystallites; Carbon fluorooxide; PHOTOLUMINESCENCE; NANOWIRES; ELECTRON; EMISSION;

D O I：

10.1016/j.jlumin.2021.118466

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report about structural and photoluminescence properties of porous silicon carbide formed by electro-chemical etching of SiC plate. The existence of a crystallite size gradient is shown across the layer. The spectrum of the photoluminescence is observed in the visible region and can be fitted at least by three peaks. The obtained photoluminescent properties are discussed with the results of the SEM, TEM and Raman studies. The nature of the low-energy peak is explained by electron-hole recombination at some localized states; the middle energy peak is related to the surface defect centers introduced by the HF reaction on the Si surface (CFO), the high energy peak can be explained by SiC nanocrystallites.

引用

页数：5

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