Ferroelectric and piezoelectric properties of La-modified lead-free (Bi0.5Na0.5)TiO3-(Bi0.5K0.5)TiO3-SrTiO3 thin films

被引:26
|
作者
Li, Peng [1 ]
Li, Wei [1 ]
Zeng, Huarong [2 ]
Liu, Shaohui [1 ]
Wang, Wei [1 ]
Zhai, Jiwei [1 ]
机构
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词
Electrical properties; BNT-BKT-ST thin films; La-doped; Sol-gel method; ELECTRICAL-PROPERTIES; LEAKAGE CURRENT; MICROSTRUCTURE; PHASE;
D O I
10.1016/j.ceramint.2014.11.140
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Lead-free piezoelectric 0.9(0.8Bi(0.5)Na(0.5)TiO(3)-0.2Bi(0.5)K(0.5)TiO(3))-0.1SrTiO(3) thin films doped with x mol% La (abbreviated as BNT-BKT-ST-xLa) (x=0, 0.5, 1.0, 1.5) were prepared by a sol-gel method on Pt(1 1 1)/Ti/SiO2/Si substrates. The effects of La content on the microstructure, ferroelectric and piezoelectric properties were investigated systematically. The X-ray diffraction patterns indicated that all films had a single-phase perovskite structure. Meanwhile, we found that lanthanum content had great influence on the grain size and electrical properties. The thin film with a composition of BNT-BKT-ST-0.5La showed the optimal electrical properties with a remnant polarization, dielectric constant and effective piezoelectric constant of 10 mu C/cm(2), 560, and 83 pm/V, respectively. The results indicated that 0.5 mol% La-doped BNT-BKT-ST thin films would be of great interest for lead-free piezoelectric devices. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:4479 / 4486
页数:8
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