Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules

被引：3

作者：

Vorob'ev, LE ^{[1
]}

Panevin, VY

Fedosov, NK

Firsov, DA

Shalygin, VA

Andreev, AA

Samsonenko, YB

Tonkikh, AA

Cirlin, GE

Kryzhanovskaya, NV

Ustinov, VM

Hanna, S

Seilmeier, A

Zakharov, ND

Werner, P

机构：

[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

[2] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[4] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia

[5] Univ Bayreuth, Inst Phys, D-95440 Bayreuth, Germany

[6] Max Planck Inst Microstruct Phys, D-06120 Halle Saale, Germany

来源：

SEMICONDUCTORS | 2005年 / 39卷 / 01期

基金：

俄罗斯基础研究基金会; 英国工程与自然科学研究理事会;

关键词：

D O I：

10.1134/1.1852644

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron and hole transitions in QDs have been calculated for different polarizations of light, and a good agreement with the experimental data is obtained. It is shown that the intraband absorption of light by electrons strongly exceeds the absorption by holes. Photoluminescence spectra and TEM images of structures with artificial molecules formed by pairs of QDs were studied. (C) 2005 Pleiades Publishing, Inc.

引用

页码：50 / 53

页数：4

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