Micro-Raman characterization of GaAs/Si with atomic layer epitaxy grown predeposition layers

被引：0
|
作者：
Dobal, PS [1 ]
Pradhan, A [1 ]
Das, U [1 ]
机构：
[1] Indian Inst Technol, Dept Phys & CELT, Kanpur 208016, Uttar Pradesh, India
来源：
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The growth of good optical quality GaAs layers on Si is reported using a thin nucleation layer grown by atomic layer epitaxy (ALE) technique in an MOCVD reactor. The GaAs/Si heteroepitaxial layers grown by this method are characterized by micro-Raman and photoluminescenec techniques and are compared to that grown by other two-step growth processes. It is found that the ALE assisted growth of GaAs/Si results in low density of antiphase domains and. electron-traps as compared to the two-step growth, which leads to high minority carrier lifetimes so essential for device fabrications.
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页码：301 / 303
页数：3
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