Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes

被引：5
|
作者：
Hajdel, Mateusz [1 ]
Muziol, Grzegorz [1 ]
Nowakowski-Szkudlarek, Krzesimir [1 ]
Siekacz, Marcin [1 ]
Wolny, Pawel [1 ]
Skierbiszewski, Czeslaw [1 ]
机构：
[1] PAS, Inst High Pressure Phys Unipress, Sokolowska 29-37, PL-01142 Warsaw, Poland
来源：
OPTICA APPLICATA | 2020年 / 50卷 / 02期
关键词：
InGaN; laser diodes; waveguide; injection efficiency; CRITICAL THICKNESS;
D O I：
10.37190/oa200214
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drift diffusion model and 2D optical mode calculation. Despite of the known effect of increased confinement of an optical mode, especially for long wavelengths, an unexpected influence on the efficiency of carrier injection into the active region is discussed. It is found that InGaN-AlGaN interface is crucial to achieving high injection efficiency. A numerical model is created, which describes the influence of InGaN waveguide and Mg doping of electron blocking layer on basic properties of laser diodes. It is found that an increase of injection efficiency allows to reduce the doping level in an electron blocking layer and take advantage of decreased optical losses.
引用
收藏
页码：311 / 321
页数：11
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