The New 7th Generation IGBT Module with High Compactness and High Power Density

被引：0
|
作者：
Mitamura, Naoki [1 ]
Kawabata, Junya [1 ]
Kusunoki, Yoshiyuki [1 ]
Onozawa, Yuichi [1 ]
Kobayashi, Yasuyuki [1 ]
Osamu, Ikawa [1 ]
机构：
[1] Fuji Elect Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano, Japan
来源：
IECON 2015 - 41ST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY | 2015年
关键词：
Insulated gate bipolar transistors; P-i-n diodes; Semiconductor device packaging; Electronic packaging thermal management; Semiconductor device measurement; Energy efficiency;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Recently the main requirements found in the market are further downsizing and higher efficiency of power conversion systems. Enhanced power density of the power modules will be the key to succeed. The increasing package reliability in higher junction temperature operation will be the major challenge. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules were significantly improved. Additionally, the maximum operating temperature was even increased to up to 175 degrees C. The new 7th generation IGBT module realized further downsizing and higher efficiency of power conversion systems.
引用
收藏
页码：905 / 908
页数：4
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