Basic feasibility constraints for multilevel CHE-programmed flash memories

被引：14
|
作者：
Modelli, A [1 ]
Manstretta, A
Torelli, G
机构：
[1] STMicroelectronics, Cent Res & Dev, I-20041 Agrate Brianza, MI, Italy
[2] STMicroelectronics, Memory Prod Grp, I-20041 Agrate Brianza, MI, Italy
[3] Univ Pavia, Dept Elect, I-27100 Pavia, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期
关键词：
channel hot electron programming; Flash memories; multilevel storage;
D O I：
10.1109/16.944193
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the basic constraints for the feasibility of multilevel (NM) Flash memories, with specific reference to devices programmed by channel hot electron injection. Issues such as programming algorithm, program and read disturb immunity, data retention, and sense circuitry sensitivity are considered. Experimental data concerning the most suited programming algorithm and reliability aspects are given. A guideline for the evaluation of NIL storage feasibility is provided, and a simple set of equations for basic constraint estimation is derived.
引用
收藏
页码：2032 / 2042
页数：11
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