Pulsed laser deposition of diamond-like carbon films on gated Si field emitter arrays for improved electron emission

被引:1
|
作者
Yavas, O
Hashimoto, T
Suzuki, N
Takai, M
Higuchi, Y
Kobayashi, M
Hosono, A
Okuda, S
机构
[1] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 5608531, Japan
[2] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[3] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6610001, Japan
关键词
field emitter array (FEA); diamond-like carbon (DLC); pulsed laser deposition (PLD); laser materials processing;
D O I
10.1143/JJAP.38.7208
中图分类号
O59 [应用物理学];
学科分类号
摘要
Diamond-like carbon (DLC) films were deposited on niobium gated silicon field emitter arrays to improve the emission properties. DLC deposition was carried out either ex-situ by conventional pulsed laser deposition in a separate chamber or in-situ during electron emission in a test chamber. Various process parameters such as the thickness of the DLC films and the ambient gas during bhn deposition were systematically varied. The thickness of the DLC coating was found to play a crucial role for the emission characteristics of the FEA. An increase of bath the emission current and its stability could be achieved using thin DLC films up to 6 nm. Thicker films, on the other hand, caused a decrease in the emission current. The results could be explained by a metal-insulator-metal (MIM) model for the electron transport through the DLC film. An increase or decrease of the emission current was observed also for the in-situ deposited DLC films depending on: the gas environment during the deposition process.
引用
收藏
页码:7208 / 7212
页数:5
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