High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

被引：0

作者：

Morrison, NA ^{[1
]}

Muhl, S ^{[1
]}

Rodil, SE ^{[1
]}

Milne, WI ^{[1
]}

Robertson, J ^{[1
]}

Weiler, M ^{[1
]}

Wang, PZ ^{[1
]}

Hutchings, I ^{[1
]}

Stolojan, V ^{[1
]}

Brown, LM ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

COVALENTLY BONDED DISORDERED THIN-FILM MATERIALS | 1998年 / 498卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous, carbon (ta-C:H). The ECWR provides growth rates of up to 900 Angstrom/min and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its bonding, stress and friction coefficient. The results indicated that the ta-C:H produced using this source fulfills the necessary requirements for applications requiring enhanced tribological performance.

引用

页码：147 / 152

页数：6

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