Plasmonic enhanced high brightness blue micro-light-emitting devices

被引:2
|
作者
Li, Jitao [1 ,2 ]
Meng, Ming [1 ]
Liu, Kuili [1 ]
Sun, Lingling [1 ]
Chen, Feng [3 ]
Liu, Wei [4 ]
机构
[1] Zhoukou Normal Univ, Sch Phys & Telecommun Engn, Zhoukou 466001, Peoples R China
[2] Zhoukou Normal Univ, Key Lab Rare Earth Funct Mat & Applicat Henan Pro, Zhoukou 466001, Peoples R China
[3] Nanjing Tech Univ, Sch Phys & Math Sci, Nanjing 211800, Peoples R China
[4] Zhejiang A&F Univ, Coll Opt Mech & Elect Engn, Hangzhou 311300, Peoples R China
基金
中国国家自然科学基金;
关键词
Plasmonic; ZnO; GaN; Micro-light-emitting devices;
D O I
10.1016/j.physe.2021.115107
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Brightness blue micro-light-emitting devices (Micro-LED) play an important role in display and optical communication fields. However, optical loss often occurs in Micro-LEDs, thus preventing the brightness. In this article, a single ZnO microwire (MW) was used to prepare the n-ZnO MW/p-GaN LED, and Ag nanowires were used to fabricate an enhanced plasmonic Micro-LED. Our results showed that the devices presented a typical bule electroluminescence (EL) spectrum and it was enhanced 10 times after the Ag nanowires were bonded. The mechanism of the enhancement was analyzed by theoretical calculation and time resolved photoluminescence (TRPL) results. The work provides a new strategy for the fabrication and enhancement of Micro-LEDs.
引用
收藏
页数:5
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