Luminescence from pulsed-laser-deposited (Sr0.7Ba0.3)2SiO4:Eu2+ thin-film phosphors

被引：4

作者：

Kwak, Jong Ho ^{[1
]}

Jung, Young Rok ^{[1
]}

Shin, Namsoo ^{[1
]}

Sohnz, Kee-Sun ^{[1
]}

机构：

[1] Sunchon Natl Univ, Dept Mat Sci & Met Engn, Choongnam 540742, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 06期

关键词：

D O I：

10.1149/1.2902308

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin-film (Sr,Ba)(2)SiO4:Eu2+ phosphors were pulsed-laser deposited on quartz glass, sapphire, and Si wafers. The processing conditions were optimized to reduce substrate temperature during deposition and also to avoid high-temperature postdeposition annealing and reduction. In this study, the maximum processing temperature was reduced to 700 degrees C, which must be lowered even further to produce on-chip phosphor films. The exact composition of the film obtained under the optimum processing conditions was identified by Rietveld refinement analysis, and two-peak emission behavior was investigated based on the exact structure. (c) 2008 The Electrochemical Society.

引用

页码：J54 / J56

页数：3

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