Silicon nanowires: the key building block for future electronic devices

被引：108
|
作者：
Chen, Lih J. [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci, Hsinchu, Taiwan
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2007年 / 17卷 / 44期
关键词：
D O I：
10.1039/b709983e
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Silicon nanowires (SiNWs) are the most promising building block for future electronic devices; tremendous progress has been made in the past ten years. In this article, the most significant advances in the syntheses and mechanisms, physical properties as well as device fabrication and applications of SiNWs reported in the literature since the beginning of 2006 are highlighted. Past achievements are also briefly summarized, and the future outlook is addressed.
引用
收藏
页码：4639 / 4643
页数：5
相关论文
共 50 条
  • [1] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    Xiangfeng Duan
    Yu Huang
    Yi Cui
    Jianfang Wang
    Charles M. Lieber
    Nature, 2001, 409 : 66 - 69
  • [2] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    Duan, XF
    Huang, Y
    Cui, Y
    Wang, JF
    Lieber, CM
    NATURE, 2001, 409 (6816) : 66 - 69
  • [3] Digest - Novel silicon compound could be a key building block
    不详
    CHEMICAL WEEK, 2003, 165 (09) : 21 - 21
  • [4] Silicon nanowires could mean even smaller electronic devices NANOTECHNOLOGY
    Donaldson, Laurie
    MATERIALS TODAY, 2010, 12 : 9 - 9
  • [5] Electronic properties of silicon nanowires
    Zheng, Y
    Rivas, C
    Lake, R
    Alam, K
    Boykin, TB
    Klimeck, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (06) : 1097 - 1103
  • [6] Macroheterocyclic Compounds - a Key Building Block in New Functional Materials and Molecular Devices
    Koifman, Oskar, I
    Ageeva, Tatyana A.
    Beletskaya, Irina P.
    Averin, Alexei D.
    Yakushev, Alexei A.
    Tomilova, Larisa G.
    Dubinina, Tatiana, V
    Tsivadze, Aslan Yu
    Gorbunova, Yulia G.
    Martynov, Alexander G.
    Konarev, Dmitri, V
    Khasanov, Salavat S.
    Lyubovskaya, Rimma N.
    Lomova, Tatyana N.
    Korolev, Viktor V.
    Zenkevich, Eduard, I
    Blaudeck, Thomas
    von Borczyskowski, Christian
    Zahn, Dietrich R. T.
    Mironov, Andrey F.
    Bragina, Natal'ya A.
    Ezhov, Artem, V
    Zhdanova, Kseniya A.
    Stuzhin, Pavel A.
    Pakhomov, Georgy L.
    Rusakova, Nataliya, V
    Semenishyn, Nikolay N.
    Smola, Sergey S.
    Parfenyuk, Vladimir, I
    Vashurin, Arthur S.
    Makarov, Sergei, V
    Dereven'kov, Ilia A.
    Mamardashvili, Nugzar Zh
    Kurtikyan, Tigran S.
    Martirosyan, Garik G.
    Burmistrov, Vladimir A.
    Aleksandriiskii, Viktor V.
    Novikov, Igor, V
    Pritmov, Dmitriy A.
    Grin, Mikhail A.
    Suvorov, Nikita, V
    Tsigankov, Anatoliy A.
    Fedorov, Alexey Yu
    Kuzmina, Natalia S.
    Nyuchev, Alexander, V
    Otvagin, Vasilii F.
    Kustov, Andrey, V
    Belykh, Dmitry, V
    Berezin, Dmitry B.
    Solovieva, Anna B.
    MACROHETEROCYCLES, 2020, 13 (04): : 311 - 467
  • [7] SILICON FOR ELECTRONIC DEVICES
    BRADSHAW, SE
    GOORISSEN, J
    JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) : 514 - 529
  • [8] Epitaxial ferroelectric thin films on silicon substrates for future electronic devices
    Kondo, M
    Maruyama, K
    Kurihara, K
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 2002, 38 (01): : 46 - 53
  • [9] Functional nanoscale electronic devices assembled using silicon nanowire building blocks
    Cui, Y
    Lieber, CM
    SCIENCE, 2001, 291 (5505) : 851 - 853
  • [10] Electronic properties and transport in silicon nanowires
    Batra, IP
    Ciani, T
    Boddupalli, D
    Soberano, L
    NANOTECH 2003, VOL 2, 2003, : 206 - 209
12345