110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon

被引：0
|
作者：
Amin, Rubab [1 ]
Khan, Sikandar [1 ]
Lee, Cheol J. [2 ]
Dalir, Hamed [3 ]
Sorger, Volker J. [1 ]
机构：
[1] George Washington Univ, Dept Elect & Comp Engn, Washington, DC 20052 USA
[2] Korea Univ, Dept Micro Nano Syst, Seoul 133791, South Korea
[3] Omega Opt Inc, 8500 Shoal Creek Blvd,Bldg 4,Suite 200, Austin, TX 78757 USA
来源：
2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 mu m compact. We show how the plasmonic metal enables steep switching via improved contact resistance.
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