Graphical user interface for SDTrimSP to simulate sputtering, ion implantation and the dynamic effects of ion irradiation

被引：0
|
作者：
Szabo, P. S. [1 ,2 ]
Weichselbaum, D. [1 ]
Biber, H. [1 ]
Cupak, C. [1 ]
Mutzke, A. [3 ]
Wilhelm, R. A. [1 ]
Aumayr, F. [1 ]
机构：
[1] TU Wien, Inst Appl Phys, Vienna, Austria
[2] Univ Calif Berkeley, Space Sci Lab, Berkeley, CA USA
[3] Max Planck Inst Plasma Phys, Greifswald, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2022年 / 522卷
基金：
奥地利科学基金会;
关键词：
SDTrimSP; Graphical user interface; Ion-solid interaction; Sputtering; Ion ranges; Ion-induced damages; simulation; COMPUTER-SIMULATION; ENERGETIC ATOMS; TRIDYN; MORPHOLOGY; PROGRAM; RANGES; YIELD; CODE; SRIM;
D O I：
10.1016/j.nimb.2022.04.008
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
SDTrimSP is a popular simulation program to compute several effects of the interaction between an impinging ion and a solid, such as ion implantation ranges, damage formation or sputtering of surface atoms. We now introduce a graphical user interface for SDTrimSP to make its operation more accessible for a broad group of users. It is written as a separate Python program and is not restricted to any specific operating system. The interface allows a quick and easy start as well as the direct evaluation of SDTrimSP simulations. Its capabilities are demonstrated here in the form of several example cases, including the dynamic simulations with SDTrimSP, where ion-induced target changes are taken into account. The presented graphical user interface is made freely available to support a large number of users in performing simulations of ion-solid interaction.
引用
收藏
页码：47 / 53
页数：7
相关论文
共 50 条
  • [1] Graphical user interface for SDTrimSP to simulate sputtering, ion implantation and the dynamic effects of ion irradiation
    Szabo, P.S.
    Weichselbaum, D.
    Biber, H.
    Cupak, C.
    Mutzke, A.
    Wilhelm, R.A.
    Aumayr, F.
    [J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2022, 522 : 47 - 53
  • [2] Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM
    Hofsaess, H.
    Zhang, K.
    Mutzke, A.
    [J]. APPLIED SURFACE SCIENCE, 2014, 310 : 134 - 141
  • [3] Establishing a Best Practice for SDTrimSP Simulations of Solar Wind Ion Sputtering
    Morrissey, Liam S.
    Schaible, Micah J.
    Tucker, Orenthal J.
    Szabo, Paul S.
    Bacon, Giovanni
    Killen, Rosemary M.
    Savin, Daniel W.
    [J]. PLANETARY SCIENCE JOURNAL, 2023, 4 (04):
  • [4] INSITU ANALYSIS OF ION IRRADIATION AND IMPLANTATION EFFECTS
    TAYLOR, A
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (08): : 1050 - 1050
  • [5] INSITU ANALYSIS OF ION IRRADIATION AND IMPLANTATION EFFECTS
    TAYLOR, A
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) : 1302 - 1304
  • [6] Sputtering effects during plasma immersion ion implantation of metals
    Manova, D.
    Lutz, J.
    Maendl, S.
    [J]. SURFACE & COATINGS TECHNOLOGY, 2010, 204 (18-19): : 2875 - 2880
  • [7] THE IRRADIATION EFFECTS OF ION-IMPLANTATION ON MAGNETIC GARNETS
    GUZMAN, AM
    BAUER, CL
    SILVAIN, JF
    KRYDER, MH
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 16 (2-3): : 230 - 236
  • [8] THE IRRADIATION EFFECTS OF ION-IMPLANTATION ON MAGNETIC GARNETS
    GUZMAN, AM
    BAUER, CL
    KRYDER, MH
    [J]. JOURNAL OF METALS, 1985, 37 (08): : A34 - A34
  • [9] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION
    EERNISSE, EP
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 480 - &
  • [10] Ion beam irradiation of nanostructures: sputtering, dopant incorporation, and dynamic annealing
    Johannes, Andreas
    Holland-Moritz, Henry
    Ronning, Carsten
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (03)
12345