Comprehensive Device Mismatch SPICE Model for Advanced Technology Nodes

被引:0
|
作者
Gan, Zhenghao [1 ]
Wong, Waisum [1 ]
Zhang, An [1 ]
Ye, Haohua [1 ]
机构
[1] Semicond Mfg Int Corp, Technol R&D Ctr, Zhangjiang Rd 18, Shanghai, Peoples R China
关键词
device mismatch; SPICE model; Pelgrom;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Device mismatch is one of the key parameters for the design of high-precision circuits since parameter variations limit circuit performance. Basically, the device mismatch is modeled by the classic Pelgrom's model in which the mismatch has L<^>(-0.5)*W<^>(-0.5) dependency. This model indeed satisfied industry needs for a long time. However, in practice, this may not be true especially for advanced technology nodes with more complex process steps. In literature published in recent years, one model different from the Pelgrom's model was proposed considering the short channel effect on matching degradation, and another one studied the impact of halo implantation on mismatch performance. In this paper, the mismatch compact models are first reviewed. Then, a comprehensive yet simple SPICE model is presented to cover various process effects on mismatch performance. In our model, the length and width dependency are modified with different exponent so that the mismatch is proportional to L<^>(-nL)*W<^>(-nW), where nL and nW are parameters to be extracted from experimental data. Examples are provided to show the capability of the new compact model.
引用
收藏
页数:2
相关论文
共 50 条
  • [1] On-Chip Device and Circuit Diagnostics on Advanced Technology Nodes by Nanoprobing
    Dawood, M. K.
    Ng, T. H.
    Tan, P. K.
    Tan, H.
    James, S.
    Limin, P. S.
    Yap, H. H.
    Lam, J.
    Mai, Z. H.
    [J]. 2014 IEEE 21ST INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2014, : 135 - 139
  • [2] Model-based SRAF Solutions for Advanced Technology Nodes
    Jayaram, Srividya
    LaCour, Pat
    Word, James
    Tritchkov, Alexander
    [J]. 29TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE, 2013, 8886
  • [3] Analytical Model of CFET Parasitic Capacitance for Advanced Technology Nodes
    Sun, Binqi
    Xu, Zhongshan
    Ding, Rongzheng
    Yang, Jingwen
    Chen, Kun
    Xu, Saisheng
    Xu, Min
    Lu, Ye
    Zhu, Xiaona
    Yu, Shaofeng
    Zhang, David
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (03) : 936 - 941
  • [4] Novel Approaches to Extend 193nm Immersion Technology to Advanced Device Nodes
    Cameron, James
    Li, Mingqi
    Liu, Cong
    Sung, Jin Wuk
    Xu, Cheng Bai
    [J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2016, 29 (05) : 753 - 760
  • [5] Recess metrology challenges for 3D device architectures in advanced technology nodes
    Santoro, Gaetano
    Houchens, Kevin
    Bogdanowicz, Janusz
    Elizov, Moshe
    Yaron, Lior
    Chemama, Michael
    Goldenshtein, Alex
    Zakay, Amit
    Amit, Noam
    Briggs, Basoene
    Pacco, Antoine
    Delhougne, Romain
    Cockburn, Andrew
    Abramovitz, Yaniv
    Tam, Aviram
    Adan, Ofer
    Mertens, Hans
    Charley, Anne-Laure
    Horiguchi, Naoto
    Leray, Philippe
    Lorusso, Gian F.
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVI, 2022, 12053
  • [6] Comprehensive SPICE Model for Power Inductor Losses
    Ehrlich, Stefan
    Joffe, Christopher
    Thielke, Hannes
    Leinfelder, Matthias
    Maerz, Martin
    [J]. THIRTY-FOURTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2019), 2019, : 1237 - 1244
  • [7] Novel SPICE model for power VDMOS device
    Zhu, Rongxia
    Huang, Dong
    Ma, Dejun
    Wang, Jinchun
    Sun, Weifeng
    Zhang, Chunwei
    [J]. Dongnan Daxue Xuebao (Ziran Kexue Ban)/Journal of Southeast University (Natural Science Edition), 2013, 43 (03): : 478 - 482
  • [8] Advanced Technology Nodes, a Foundry Perspective
    Faul, Juergen
    Hoentschel, Jan
    Wiatr, Maciej
    Horstmann, Manfred
    [J]. ION IMPLANTATION TECHNOLOGY 2012, 2012, 1496 : 11 - 15
  • [9] CMP Challenges for Advanced Technology Nodes
    John H. Zhang
    Haigou Huang
    Andrew M. Greene
    Ruilong Xie
    Soon-Cheon Seo
    Pietro Montanini
    Wei-Tsu Tseng
    Stan Tsai
    Matthew Malley
    Qiang Fang
    Raghuveer Patlolla
    Dinesh Koli
    Dechao Guo
    Donald F. Canaperi
    Charan Surisetty
    Jean E. Wynne
    Walter Kleemeier
    Cathy Labelle
    [J]. MRS Advances, 2017, 2 (44) : 2361 - 2372
  • [10] A comprehensive vertical BJT mismatch model
    Drennan, PG
    McAndrew, CC
    Bates, J
    [J]. PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1998, : 83 - 86