IMPACT OF GATE COUPLING AND MISALIGNMENT ON PERFORMANCE OF DOUBLE-GATE ORGANIC THIN FILM TRANSISTORS

被引：0

作者：

Han, Jing-Wen ^{[1
,2
]}

Sun, Lei ^{[2
]}

Xu, Hao ^{[2
]}

Zhang, Yi-Bo ^{[2
]}

Zhang, Sheng-Dong ^{[1
,2
]}

Wang, Yi ^{[2
]}

机构：

[1] Peking Univ, Inst Microelect, Shenzhen 518000, Peoples R China

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a numerical simulation of the electrically separable dual-gate organic thin film transistors (DG-OTFTs). It is revealed that double-gate architecture is able to dynamically control the threshold voltage by the coupling of the top/bottom gates, and the threshold voltage was insensitive to the thickness of the active layer. The contact resistance of staggered OTFTs is decreased with thinner organic semiconductor layer thickness. We also observe that the device characteristics are sensitive to the misalignment, and the significant change of the driving ability and threshold voltage is also observed while misalignment exists.

引用

页数：3

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