Hydrogen ion implantation caused defect structures in heavily doped silicon substrates

The defects caused by hydrogen ion (H+) implantation were studied for heavily arsenic (As), boron (B), and phosphorous (P) doped (100) silicon substrates. At the implantation energy of 170keV, H+ beam generates defect zones in both arsenic and boron doped silicon wafers. The width of implant damage zone in the heavily As-doped, silicon increased from 138nm to 415nm when H+ ion implant dose increased from 1x10(16) ion/cm(2) to 5x10(16) ion/cm(2), respectively. This dependence is however, opposite in the heavily B-doped substrate. The defect zone decreased with increasing H+ ion dose. The second ion mass spectrometry (SIMS) data show that in both heavily As- and P-doped silicon substrates, hydrogen distribution was governed by both H+-dopant pairing reaction and the amount of the crystal damage, whereas it is exclusively determined by pairing reaction in heavily B-doped silicon substrates. The atomic force microscope (AFM) measurement indicated that the rms roughness of the as-exfoliated surface was 18.86nm, 13.06nm, and 6.79nm for P-, As- and B-doped silicon substrates, respectively. An rms roughness improvement of 20nm-170nm was observed when wafers were annealed at 270 degrees C.