Quantum confinement between self-organized Pt nanowires on Ge(001) -: art. no. 116801

被引：95

作者：

Oncel, N ^{[1
]}

van Houselt, A ^{[1
]}

Huijben, J ^{[1
]}

Hallbäck, AS ^{[1
]}

Gurlu, O ^{[1
]}

Zandvliet, HJW ^{[1
]}

Poelsema, B ^{[1
]}

机构：

[1] Univ Twente, MESA Res Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.95.116801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The existence of one-dimensional (1D) electronic states between self-organized Pt nanowires spaced 1.6 or 2.4 nm apart on a Ge(001) surface is revealed by low-temperature scanning tunneling microscopy. These perfectly straight Pt nanowires act as barriers for a surface state (located just below the Fermi level) of the underlying terrace. The energy positions of the 1D electronic states are in good agreement with the energy levels of a quantum particle in a well. Spatial maps of the differential conductivity of the 1D electronic states conclusively reveal that these states are exclusively present in the troughs between the Pt nanowires.

引用

页数：4

共 50 条

[41] Optical properties of Ge self-organized quantum dots in Si
Physical Review B: Condensed Matter, 57 (15):
[42] Optical properties of Ge self-organized quantum dots in Si
Peng, CS
Huang, Q
Cheng, WQ
Zhou, JM
Zhang, YH
Sheng, TT
Tung, CH
PHYSICAL REVIEW B, 1998, 57 (15): : 8805 - 8808
[43] Lattice strains and composition of self-organized Ge dots grown on Si(001)
Jiang, ZM
Jiang, XM
Jiang, WR
Jia, QJ
Zheng, WL
Qian, DC
APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3397 - 3399
[44] Controlled Placement of Self-Organized Ge Dots on Patterned Si (001) Surfaces
Lee, Huang-Ming
Yang, Tsung-Hsi
Luo, Guangli
Chang, Edward Yi
Japanese Journal of Applied Physics, Part 2: Letters, 2004, 43 (2 B):
[45] Controlled placement of self-organized Ge dots on patterned Si (001) surfaces
Lee, HM
Yang, TH
Luo, GL
Chang, EY
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (2B): : L247 - L249
[46] Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates
Jin, G
Liu, JL
Thomas, SG
Luo, YH
Wang, KL
Nguyen, BY
APPLIED PHYSICS LETTERS, 1999, 75 (18) : 2752 - 2754
[47] Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates
Jin, G
Liu, JL
Luo, YH
Wang, KL
THIN SOLID FILMS, 2000, 369 (1-2) : 49 - 54
[48] Elastic relaxations and interactions for vicinal and self-organized surfaces:: Role of crystalline anisotropy -: art. no. 045434
Croset, B
Prévot, G
PHYSICAL REVIEW B, 2006, 73 (04):
[49] Self-organized nanocolumnar structure in superhard TiB2 thin films -: art. no. 131909
Mayrhofer, PH
Mitterer, C
Wen, JG
Greene, JE
Petrov, I
APPLIED PHYSICS LETTERS, 2005, 86 (13) : 1 - 3
[50] Strain and correlation of self-organized Ge1-xMnx nanocolumns embedded in Ge (001)
Tardif, S.
Favre-Nicolin, V.
Lancon, F.
Arras, E.
Jamet, M.
Barski, A.
Porret, C.
Bayle-Guillemaud, P.
Pochet, P.
Devillers, T.
Rovezzi, M.
PHYSICAL REVIEW B, 2010, 82 (10):

← 1 2 3 4 5 →