Low Activation Temperature Au/Ti Getter Films for Wafer-Level Vacuum Packaging

被引:5
|
作者
Wu, M. [1 ]
Moulin, J. [1 ]
Agnus, G. [1 ]
Bosseboeuf, A. [1 ]
机构
[1] Univ Paris 11, CNRS, IEF, UMR 8622, F-91405 Orsay, France
关键词
D O I
10.1149/06405.0297ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this work thermal diffusion of titanium through an ultrathin capping gold layer has been investigated as an alternative way to produce a getter film activated at low temperature. Ti out-diffusion from Au/Ti thin films was studied using four probe resistivity measurements, spectroscopic ellipsometry, XPS analysis, residual stress measurements, SEM cross section observation and Ion Beam Etching coupled with mass spectrometry. The results show that a titanium oxide film is growing as the titanium out diffuses and comes in contact with traces of oxidizing species in N-2 annealing gaz. The pumping capacity is large enough to integrate Au/Ti film as a low temperature getter film for wafer-level vacuum packaging.
引用
收藏
页码:297 / 304
页数:8
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