Analysis of a Model of Minority Charge-Carrier Distributions Generated in a Three-Layer Semiconductor Structure by a Wide Electron Beam

被引：3

作者：

Snopova, M. G. ^{[1
]}

Burylova, I. V. ^{[2
]}

Petrov, V. I. ^{[3
]}

Stepovich, M. A. ^{[2
]}

机构：

[1] Moscow State Tech Univ, Kaluga Branch, Kaluga, Russia

[2] Kaluga State Pedag Univ, Kaluga, Russia

[3] Moscow MV Lomonosov State Univ, Moscow, Russia

来源：

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 2007年 / 1卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Surface Investigation; Neutron Technique; Multilayered Structure; Independent Source; Semiconductor Structure;

D O I：

10.1134/S1027451007040088

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Based on the use of a model of independent sources, a method is described for the calculation of minority-charge-carrier distributions generated in three-layer planar semiconductor structures by a wide electron beam with energy typical of electron probe devices (5-30 keV). It is shown that, in limiting cases, equations describing these distributions agree with the data obtained previously for a two-layer semiconductor structure.

引用

页码：406 / 410

页数：5

共 26 条

[21] Projective approximation of the stochastic model of collective motion of minority charge carriers generated by a broad electron beam in semiconducting material
Seregina, E. V.
Makarenkov, A. M.
Stepovich, M. A.
JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2011, 5 (04) : 746 - 753
[22] Use of the projective method for determining statistical characteristics of the solution to the differential diffusion equation of minority carriers generated in a semiconductor material by a wide electron beam
E. V. Seregina
A. M. Makarenkov
M. A. Stepovich
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2009, 3 : 468 - 482
[23] Use of the Projective Method for Determining Statistical Characteristics of the Solution to the Differential Diffusion Equation of Minority Carriers Generated in a Semiconductor Material by a Wide Electron Beam
Seregina, E. V.
Makarenkov, A. M.
Stepovich, M. A.
JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2009, 3 (03) : 468 - 482
[24] On a modified projection scheme of the least-squares method for the modeling of the distribution of minority charge carriers generated by an electron beam in a homogeneous semiconductor material
Seregina E.V.
Stepovich M.A.
Makarenkov A.M.
Seregina, E. V. (evfs@yandex.ru), 2013, Izdatel'stvo Nauka (07): : 1077 - 1080
[25] Establishment of actuation model of the three-layer structure piezoelectric bimorph and simulation analysis based on analysis of the internal energy
Guo, Xiaodong
Zhang, Fuxing
Yan, Shaoze
2016 IEEE INTERNATIONAL CONFERENCE ON MECHATRONICS AND AUTOMATION, 2016, : 2349 - 2354
[26] Investigating the performance of four specific types of material grafts and their effects on hemodynamic patterns as well as on von Mises stresses in a grafted three-layer aortic model using fluid-structure interaction analysis
Rahmani S.
Jarrahi A.
Navidbakhsh M.
Alizadeh M.
Navidbakhsh, Mahdi (mnavid@iust.ac.ir), 1600, Taylor and Francis Ltd. (41): : 630 - 643

← 1 2 3 →