Analysis of a Model of Minority Charge-Carrier Distributions Generated in a Three-Layer Semiconductor Structure by a Wide Electron Beam

被引：3

作者：

Snopova, M. G. ^{[1
]}

Burylova, I. V. ^{[2
]}

Petrov, V. I. ^{[3
]}

Stepovich, M. A. ^{[2
]}

机构：

[1] Moscow State Tech Univ, Kaluga Branch, Kaluga, Russia

[2] Kaluga State Pedag Univ, Kaluga, Russia

[3] Moscow MV Lomonosov State Univ, Moscow, Russia

来源：

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 2007年 / 1卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Surface Investigation; Neutron Technique; Multilayered Structure; Independent Source; Semiconductor Structure;

D O I：

10.1134/S1027451007040088

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Based on the use of a model of independent sources, a method is described for the calculation of minority-charge-carrier distributions generated in three-layer planar semiconductor structures by a wide electron beam with energy typical of electron probe devices (5-30 keV). It is shown that, in limiting cases, equations describing these distributions agree with the data obtained previously for a two-layer semiconductor structure.

引用

页码：406 / 410

页数：5

共 26 条

[1] Analysis of a model of minority charge-carrier distributions generated in a three-layer semiconductor structure by a wide electron beam
M. G. Snopova
I. V. Burylova
V. I. Petrov
M. A. Stepovich
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2007, 1 : 406 - 410
[2] Simulation of the distribution of minority carriers generated in a two-layer semiconductor structure by a wide electron beam
Khokhlov, AG
Snopova, MG
Stepovich, MA
CRYSTALLOGRAPHY REPORTS, 2004, 49 : S119 - S122
[3] On some problems of modeling the distributions of minority charge carriers generated by an electron beam in a semiconductor material
Seregina E.V.
Stepovich M.A.
Makarenkov A.M.
Filippov M.N.
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2016, 10 (2) : 445 - 449
[4] On Modeling the Distributions of Minority Charge Carriers Generated by a Wide Electronic Beam in Planar Multilayer Semiconductor Structures
Seregina, E. V.
Kalmanovich, V. V.
Stepovich, M. A.
JOURNAL OF SURFACE INVESTIGATION, 2020, 14 (04): : 713 - 717
[5] On Modeling the Distributions of Minority Charge Carriers Generated by a Wide Electronic Beam in Planar Multilayer Semiconductor Structures
E. V. Seregina
V. V. Kalmanovich
M. A. Stepovich
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2020, 14 : 713 - 717
[6] Electron-beam-generated carrier distributions in semiconductor multilayer structures
Mohr, H
Dunstan, DJ
JOURNAL OF MICROSCOPY, 1997, 187 : 119 - 124
[7] Comparison of analytical and numerical modeling of distributions of nonequilibrium minority charge carriers generated by a wide beam of medium-energy electrons in a two-layer semiconductor structure
Kalmanovich, V. V.
Seregina, E., V
Stepovich, M. A.
APPLIED MATHEMATICS, COMPUTATIONAL SCIENCE AND MECHANICS: CURRENT PROBLEMS, 2020, 1479
[8] Model of independent sources used in calculation of minority charge carriers generated by electron beam in semiconductor
Belov, AA
Petrov, VI
Stepovich, MA
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (09): : 1317 - 1322
[9] The model of independent sources using for calculation of distribution of minority charge carriers, generated in two-layer semiconductor by electron beam
Stepovich, MA
KhokhLov, AG
Snopova, MG
SIXTH SEMINAR ON PROBLEMS OF THEORETICAL AND APPLIED ELECTRON AND ION OPTICS, 2004, 5398 : 159 - 165
[10] Mathematical simulation of the distribution of minority charge carriers generated in a multilayer semiconducting structure by a wide electron beam
Burylova, I. V.
Petrov, V. I.
Snopova, M. G.
Stepovich, M. A.
SEMICONDUCTORS, 2007, 41 (04) : 444 - 447

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