Length-Sorted Semiconducting Carbon Nanotubes for High-Mobility Thin Film Transistors

被引:116
|
作者
Miyata, Yasumitsu [1 ,2 ]
Shiozawa, Kazunari [1 ,2 ]
Asada, Yuki [1 ,2 ]
Ohno, Yutaka [3 ]
Kitaura, Ryo [1 ,2 ]
Mizutani, Takashi [3 ]
Shinohara, Hisanori [1 ,2 ]
机构
[1] Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan
[2] Nagoya Univ, Inst Adv Res, Nagoya, Aichi 4648602, Japan
[3] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan
基金
日本学术振兴会;
关键词
Single-walled carbon nanotubes; separation; thin-film transistors; gel filtration; dispersion; optical absorption; carrier mobility; FIELD-EFFECT TRANSISTORS; ELECTRONIC-PROPERTIES; INTEGRATED-CIRCUITS; SEPARATION; NETWORKS; ARRAYS; GEL;
D O I
10.1007/s12274-011-0152-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have developed a process for chemical purification of carbon nanotubes for solution-processable thin-film transistors (TFTs) having high mobility. Films of the purified carbon nanotubes fabricated by simple drop coating showed carrier mobilities as high as 164 cm(2)V(-1)s(-1), normalized transconductances of 0.78 Sm-1, and on/off current ratios of 10(6). Such high performance requires the preparation of a suspension of micrometer-long and highly purified semiconducting single-walled carbon nanotubes (SWCNTs). Our purification process includes length and electronic-type selective trapping of SWCNTs using recycling gel filtration with a mixture of surfactants. The results provide an important milestone toward printed high-speed and large-area electronics with roll-to-roll and ink-jet device fabrication.
引用
收藏
页码:963 / 970
页数:8
相关论文
共 50 条
  • [41] A polymer gate dielectric for high-mobility polymer thin-film transistors and solvent effects
    Park, J
    Park, SY
    Shim, SO
    Kang, H
    Lee, HH
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3283 - 3285
  • [42] High-mobility low-power flexible ZnO thin film transistors on plastic substrates
    Takalloo, Saeedeh Ebrahimi
    Servati, Peyman
    [J]. 2012 IEEE PHOTONICS CONFERENCE (IPC), 2012, : 897 - 898
  • [43] High-mobility thin film transistors with neodymium-substituted indium oxide active layer
    Lin, Zhenguo
    Lan, Linfeng
    Xiao, Peng
    Sun, Sheng
    Li, Yuzhi
    Song, Wei
    Gao, Peixiong
    Wang, Lei
    Ning, Honglong
    Peng, Junbiao
    [J]. APPLIED PHYSICS LETTERS, 2015, 107 (11)
  • [44] Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors
    Li, Chen-sha
    Li, Yu-ning
    Wu, Yi-liang
    Ong, Beng-S.
    Loutfy, Rafik-O.
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (11) : 1626 - 1634
  • [45] Short-channel, high-mobility organic thin-film transistors with alkylated dinaphthothienothiophene
    Kitamura, Masatoshi
    Kuzumoto, Yasutaka
    Arakawa, Yasuhiko
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 2013, 10 (11): : 1632 - 1635
  • [46] High-mobility InSnZnO Thin Film Transistors via Introducing Water Vapor Sputtering Gas
    Li, Ting
    Liu, Xiaohan
    Ren, Junyan
    Hu, Peixuan
    Qian, Yujia
    Jin, Tingting
    Sun, Jingting
    Chen, Zhipeng
    Liang, Lingyan
    Cao, Hongtao
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (24) : 31237 - 31246
  • [47] Silaindacenodithiophene Semiconducting Polymers for Efficient Solar Cells and High-Mobility Ambipolar Transistors
    Ashraf, Raja Shahid
    Chen, Zhuoying
    Leem, Dong Seok
    Bronstein, Hugo
    Zhang, Weimin
    Schroeder, Bob
    Geerts, Yves
    Smith, Jeremy
    Watkins, Scott
    Anthopoulos, Thomas D.
    Sirringhaus, Henning
    de Mello, John C.
    Heeney, Martin
    McCulloch, Iain
    [J]. CHEMISTRY OF MATERIALS, 2011, 23 (03) : 768 - 770
  • [48] High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques
    Higuchi, Kentaro
    Kishimoto, Shigeru
    Nakajima, Yuta
    Tomura, Takuya
    Takesue, Masafumi
    Hata, Katsuhiko
    Kauppinen, Esko I.
    Ohno, Yutaka
    [J]. APPLIED PHYSICS EXPRESS, 2013, 6 (08)
  • [49] A Facile Solution-Deposited Approach to Fabricate High-Mobility CdS Thin Film Transistors
    He, Yanlin
    He, Han
    Shi, Xinan
    Huang, Hao
    Pan, Daocheng
    [J]. IEEE ELECTRON DEVICE LETTERS, 2024, 45 (03) : 412 - 415
  • [50] Fabrication and Characterization of High-Mobility Solution-Based Chalcogenide Thin-Film Transistors
    Mejia, Israel
    Salas-Villasenor, Ana L.
    Cha, Dongkyu
    Alshareef, Husam N.
    Gnade, Bruce E.
    Quevedo-Lopez, Manuel A.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 327 - 332