Stress-enhanced dislocation density reduction in multicrystalline silicon

被引：11
|
作者：
Bertoni, M. I. [1 ]
Powell, D. M. [1 ]
Vogl, M. L. [1 ]
Castellanos, S. [1 ]
Fecych, A. [1 ]
Buonassisi, T. [1 ]
机构：
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 01期
关键词：
dislocations; stress; dislocation density; 3-point bending; annealing; high temperature; Si; DEFORMATION; MOTION;
D O I：
10.1002/pssr.201004344
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Stress is generally perceived to be detrimental for multicrystalline silicon (me-Si), leading to dislocation multiplication during crystal growth and processing. Herein, we evaluate the role of stress as a driving force for dislocation density reduction in me-Si. At high temperatures, close to the melting point (>0.8T(m)), we observe that the application of stress as well as the relief of residual stress, can modify the density of preexisting dislocations in as-grown me-Si under certain conditions, leading to a net local reduction of dislocation density. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：28 / 30
页数：3
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