Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

被引：134
|
作者：
Wang, C. H. [1 ,2 ]
Chang, S. P. [1 ,2 ,3 ]
Ku, P. H. [1 ,2 ]
Li, J. C. [1 ,2 ]
Lan, Y. P. [1 ,2 ]
Lin, C. C. [4 ]
Yang, H. C. [3 ]
Kuo, H. C. [1 ,2 ]
Lu, T. C. [1 ,2 ]
Wang, S. C. [1 ,2 ]
Chang, C. Y. [5 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan
[3] Epistar Co Ltd, R&D Div, Hsinchu, Taiwan
[4] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Tainan, Taiwan
[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 17期
关键词：
D O I：
10.1063/1.3655903
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Graded-composition multiple quantum barriers (GQB) were designed and incorporated in c-plane InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrate to improve hole transport and efficiency droop. The simulation of GQB LED design predicts enhancement of the hole transport in the active region at both low and high current densities. The fabricated LED with GQB structure exhibits lower series resistance and substantially reduced droop behavior of only 6% in comparison with 34% for conventional LED, supporting the improvement of hole transport in our design. (C) 2011 American Institute of Physics. [doi:10.1063/1.3655903]
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页数：3
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