MBE growth and optical properties of Gal\ on SiC/Si(111) hybrid substrate

被引：0

作者：

Reznik, R. R. ^{[1
,2
,3
]}

Kotlyar, K. P. ^{[1
,4
]}

Ilkiv, I. V. ^{[1
,2
]}

Kukushkin, S. A. ^{[3
,6
]}

Osipov, A. V. ^{[3
,6
]}

Soshnikov, I. P. ^{[1
,4
,5
,7
]}

Nikitina, E. V. ^{[1
]}

Cirlin, G. E. ^{[1
,2
,3
,5
]}

机构：

[1] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr RAS, Khlopina 8-3, St Petersburg 194021, Russia

[2] Peter Great St Petersburg Polytech Univ, Polytech Skaya 29, St Petersburg 195251, Russia

[3] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

[4] RAS, Ioffe Phys Tech Inst, Politekhn Skaya 26, St Petersburg 194021, Russia

[5] RAS, Inst Analyt Instrumentat, Rizhsky 26, St Petersburg 190103, Russia

[6] Russian Acad Sci, Inst Problems Mech Engn, Bolshoj 6, St Petersburg 199178, Russia

[7] St Petersburg Electrotech Univ LETI, Prof Popova 5, St Petersburg 197376, Russia

来源：

2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO) | 2016年

关键词：

nanowires; semiconductors; nattostructures; silicon; silicon carbide; molecular-beam epitaxy;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fundamental possibility of the MBE GaN nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting system have been studied and compared properties of GaN nanowires on silicon substrate.

引用

页数：1

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