Electrical properties of Cr/Si(p) structures

被引：8
|
作者：
Benouattas, N
Tamaarat, B
Bouabellou, A
Halimi, R
Mosser, A
机构：
[1] Univ Ferhat Abbas, Inst Phys, Setif 19000, Algeria
[2] Univ Constantine, Unite Rech Phys Mat, Constantine 25000, Algeria
[3] Univ Strasbourg 1, GSI, IPCMS, F-67037 Strasbourg, France
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 02期
关键词：
D O I：
10.1016/S0038-1101(98)00187-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A chromium layer was evaporated on single-crystal silicon wafers ions implanted with phosphorus at 40 keV to doses of 5 x 10(14) and 5 x 10(15) atm cm(-2). Interface reaction was followed by Rutherford backscattering spectroscopy and X-ray diffraction analysis. In order to investigate the charge carrier transport mechanism across the Cr/Si interface, I-V and C-V characteristics were measured in Cr/Si samples thermally annealed at 475 degrees C and 550 degrees C for a variety of time lengths. The degradation of Cr/Si structures deviating from Schottky barriers behavior is noted and the p-type conductivity of CrSi2 was confirmed. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：439 / 446
页数：8
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