Bond-coupled electron transfer processes: Cleavage of Si-Si bonds in disilanes

被引:12
|
作者
Al-Kaysi, RO [1 ]
Goodman, JL [1 ]
机构
[1] Univ Rochester, Dept Chem, Rochester, NY 14627 USA
关键词
D O I
10.1021/ja0432564
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Photooxidation of 1,1,2,2-tetra-tert-butyl-1,2-diphenyldisilane, 1, by triplet sensitizers in CHCl3/CCl4 solutions yields chlorosilane, 2, in high chemical yield. The quantum yield for formation of 2 depends on the energy of the ion radical pair formed following initial electron transfer. Dissociative return electron transfer (DRET) is proposed as the mechanism for the highly efficient Si-Si bond cleavage in 1. DRET may be a useful strategy for the fragmentation of other such bonds in di-, oligo-, and polysilanes as well as other group 4A compounds using a variety of sensitizers with different spectral properties. Copyright © 2005 American Chemical Society.
引用
收藏
页码:1620 / 1621
页数:2
相关论文
共 50 条
  • [41] Two Si-Si double bonds connected by a phenylene bridge
    Bejan, Iulia
    Scheschkewitz, David
    [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2007, 46 (30) : 5783 - 5786
  • [42] FORMATION OF SI-SI BONDS FROM SI-H BONDS CATALYZED BY TRANSITION-METALS
    BROWNWENSLEY, KA
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1985, 189 (APR-): : 273 - INOR
  • [43] RECENT RESULTS OF RESEARCHES INTO COMPOUNDS CONTAINING SI-SI BONDS
    HENGGE, E
    [J]. KEMIAI KOZLEMENYEK, 1978, 49 (3-4): : 195 - 212
  • [44] INNER-SHELL SPECTROSCOPY OF COMPOUNDS CONTAINING SI-SI BONDS - IS THERE A LOCALIZED, LOW-ENERGY SI-SI RESONANCE
    URQUHART, SG
    XIONG, JZ
    WEN, AT
    SHAM, TK
    BAINES, KM
    DESOUZA, GGB
    HITCHCOCK, AP
    [J]. CHEMICAL PHYSICS, 1994, 189 (03) : 757 - 768
  • [45] Electron-accepting system of Si-Si bond in linear framework by combination with strong donor
    Naka, K
    Uemura, T
    Chujo, Y
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2001, 123 (25) : 6209 - 6210
  • [46] Preferential etching of Si-Si bond in the microcrystalline silicon germanium
    Kim, Shinho
    Park, Chansu
    Lee, Jung-Chul
    Cho, Jun-Sik
    Kim, Yangdo
    [J]. CURRENT APPLIED PHYSICS, 2013, 13 (03) : 457 - 460
  • [47] Mechanism for Si-Si Bond Rupture in Single Molecule Junctions
    Li, Haixing
    Kim, Nathaniel T.
    Su, Timothy A.
    Steigerwald, Michael L.
    Nuckolls, Colin
    Darancet, Pierre
    Leighton, James L.
    Venkataraman, Latha
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2016, 138 (49) : 16159 - 16164
  • [48] ACTIVATION OF THE SI-SI BOND BY TRANSITION-METAL COMPLEXES
    SHARMA, HK
    PANNELL, KH
    [J]. CHEMICAL REVIEWS, 1995, 95 (05) : 1351 - 1374
  • [49] Silylation of N-heterocyclic carbene with aminochlorosilane and -disilane: dehydrohalogenation vs. Si-Si bond cleavage
    Cui, Haiyan
    Cui, Chunming
    [J]. DALTON TRANSACTIONS, 2011, 40 (44) : 11937 - 11940
  • [50] Bond strength of conductive Si-Si fusion bonded seals
    Schjolberg-Henriksen, Kari
    Tvedt, Lars Geir Whist
    Moe, Sigurd
    Poppe, Erik
    Wang, Dag
    Gjelstad, Stein Are
    Mork, Christopher
    Imenes, Kristin
    [J]. 2014 SYMPOSIUM ON DESIGN, TEST, INTEGRATION AND PACKAGING OF MEMS/MOEMS (DTIP), 2014, : 312 - 317