Measurement of SRAM Power-Up State for PUF Applications using an Addressable SRAM Cell Array Test Structure

被引：0

作者：

Takeuchi, Kiyoshi ^{[1
]}

Mizutani, Tomoko ^{[1
]}

Saraya, Takuya ^{[1
]}

Kobayashi, Masaharu ^{[1
]}

Hiramoto, Toshiro ^{[1
]}

Shinohara, Hirofumi ^{[2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo, Japan

[2] Waseda Univ, Grad Sch Informat Prod & Syst, Fukuoka, Japan

来源：

2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS) | 2016年

关键词：

test structure; physical unclonable function; SRAM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SRAM data just after power-up were measured using an addressable SRAM cell array test structure. It was found that the results are strongly affected by the address switching noise and "memory effect". An addressing sequence combined with word line reset pulse application is proposed for reliable power-up data stability evaluation.

引用

页码：130 / 134

页数：5

共 25 条

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