Refrigeration effect in a single-level quantum dot with thermal bias

被引:44
|
作者
Chi, Feng [1 ]
Zheng, Jun [2 ]
Liu, Yu-Shen [3 ,4 ]
Guo, Yong [5 ,6 ]
机构
[1] Bohai Univ, Coll Engn, Jinzhou 121013, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
[3] Changshu Inst Technol, Jiangsu Lab Adv Funct Mat, Changshu 215500, Peoples R China
[4] Changshu Inst Technol, Coll Phys & Engn, Changshu 215500, Peoples R China
[5] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[6] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
关键词
SUPERLATTICES; CONDUCTANCE; FLOW;
D O I
10.1063/1.4720093
中图分类号
O59 [应用物理学];
学科分类号
摘要
We theoretically study the heat generation in a quantum dot (QD) connected simultaneously to two reservoirs and a local phonon bath. We find that driven solely by an external thermal bias, the resonant tunneling electrons can absorb heat from the phonon bath to the QD that are held at the same temperature. This QD refrigerator also works well under the thermoelectric effect. At room temperature and large thermal bias, the magnitude of the heat current density is on the order of nW/cm(2) in typical Ge/Si QD, of which the dot diameter is 40 nm with phonon frequency 5 x 10(13) rad/s. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4720093]
引用
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页数:4
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