A Study of Hydrogen Gas Sensing Performance of Pt/Graphene/GaN Devices

被引：0
|
作者：
Yu, J. [1 ]
Shafiei, M. [2 ]
Ou, J. [1 ]
Shin, K. [3 ]
Wlodarski, W. [1 ]
机构：
[1] RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia
[2] Queensland Univ Technol, Sch Engn Syst, Brisbane, Qld, Australia
[3] Graphene Res Inst, Dept Chem, Seoul, South Korea
来源：
2011 IEEE SENSORS | 2011年
关键词：
GRAPHENE FILMS; LARGE-AREA; SEMICONDUCTORS; NITRIDE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we present an investigation on Pt/graphene/GaN devices for hydrogen gas sensing applications. The graphene layer was deposited on GaN substrate using a chemical vapour deposition (CVD) technique and was characterised via Raman and X-ray photoelectron spectroscopy. The current-voltage (I-V) and dynamic response of the developed devices were investigated in forward and reverse bias operation at an optimum temperature of 160 degrees C. Voltage shifts of 661.1 and 484.9 mV were recorded towards 1% hydrogen at forward and reverse constant bias current of 1 mA, respectively.
引用
收藏
页码：1017 / 1020
页数：4
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