A Review of the Growth, Doping & Applications of β-Ga2O3 thin films

被引：48

作者：

Razeghi, Manijeh ^{[1
]}

Park, Ji-Hyeon ^{[1
]}

McClintock, Ryan ^{[1
]}

Pavlidis, Dimitris ^{[2
]}

Teherani, Ferechteh H. ^{[3
]}

Rogers, David J. ^{[3
]}

Magill, Brenden A. ^{[4
]}

Khodaparast, Giti A. ^{[4
]}

Xu, Yaobin ^{[5
,6
]}

Wu, Jinsong ^{[5
,6
]}

Dravid, Vinayak P. ^{[5
,6
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

[2] Boston Univ, Coll Engn, Dept Elect & Comp Engn, Boston, MA 02215 USA

[3] Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France

[4] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA

[5] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[6] Northwestern Univ, NUANCE Ctr, Evanston, IL 60208 USA

来源：

OXIDE-BASED MATERIALS AND DEVICES IX | 2018年 / 10533卷

基金：

美国国家科学基金会;

关键词：

Ga2O3; Solar blind photo detectors; Thin films; SOLAR-BLIND PHOTODETECTORS; ATOMIC LAYER DEPOSITION; BETA-GALLIUM OXIDE; SINGLE-CRYSTALS; C-PLANE; OPTICAL-PROPERTIES; GA2O3; FILMS; SAPPHIRE; EPSILON-GA2O3; PHASE;

D O I：

10.1117/12.2302471

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

beta-Ga2O3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its' outstanding material properties including an extremely wide bandgap (Eg similar to 4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of beta-Ga2O3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for beta-Ga2O3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.

引用

页数：24

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