Comparative Study of Analog Parameters for Various Silicon-Based Tunnel Field-Effect Transistors

被引：2

作者：

Sreevani, Alluru ^{[1
]}

Swarnakar, Sandip ^{[1
]}

Krishna, Sabbi Vamshi ^{[2
]}

机构：

[1] G Pullaiah Coll Engn & Technol, Dept Elect & Commun Engn, Photon Lab, Kurnool 518002, Andhra Pradesh, India

[2] Ravindra Coll Engn Women, Dept Elect & Commun Engn, Nandikotkur Rd, Kurnool 518452, Andhra Pradesh, India

来源：

SILICON | 2022年 / 14卷 / 15期

关键词：

Current ratio; On-current; Short-channel-effects; Off-current; Sub-threshold slope; Band-to-band tunnelling; DESIGN; GATE; TFET; FET; DEVICE;

D O I：

10.1007/s12633-022-01674-y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this ultramodern scenario, low power, less cost and reduced storage devices are in great demand. Because the majority devices operate on a remote power supply, low-power memories are enticing the unified VLSI industry. For reduced power consumption, high energy efficiency circuit, TFET is a feasible alternate to MOSFET as it is a p-type, intrinsic, n-type (p-i-n) diode whose tunnel current drifts amidst of the bands of channel and source having a minimum leakage current and reduced sub-threshold slope (SS). The sole difference between TFET and MOSFET is the switching mechanism: TFETs use band-to-band tunnelling (BTBT), while MOSFETs use thermionic emission. In this survey, various types of TFET structures are described considering analog, linearity and device parameters like on-current (I-ON), SS, off-current (I-OFF), current ratio (I-ON/I-OFF), threshold voltage (V-T) etc., and comparison is done among the designed TFET structures.

引用

页码：9223 / 9235

页数：13

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