Proton-Induced Degradation of InP/InGaAs HBTs Predicted by Nonionizing Energy Loss Model

被引：15

作者：

Li, C. H. ^{[1
]}

Lu, H. L. ^{[1
]}

Zhang, Y. M. ^{[1
]}

Liu, M. ^{[1
]}

Zhao, X. H. ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 03期

关键词：

Gain degradation; heterojunction bipolar transistor; InP/InGaAs; nonionizing energy loss; proton radiation; HETEROJUNCTION BIPOLAR-TRANSISTORS; ELECTRON-IRRADIATION; IONIZING-RADIATION; HEAVY-IONS; VOLTAGE; DEVICES; NIEL;

D O I：

10.1109/TNS.2015.2416729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The proton-induced degradation for InP/InGaAs heterojunction bipolar transistors (HBTs) is studied based on the calculation in the energy range from the displacement damage threshold to 100 MeV with analytical model of nonionizing energy loss (NIEL). The experiments of 3 and 10 MeV proton radiation on InP/InGaAs HBTs have been performed, in which significant current gain degradation is predominant. The increase in base current due to the increased recombination is responsible for the noticeable current gain degradation. Qualitative comparison of the NIEL results with the proton damage coefficients for InP/InGaAs HBTs is made and good correlation is found.

引用

页码：1336 / 1340

页数：5

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