Study of ZnTe thin films deposited by r.f. sputtering

被引：87
|
作者：
Bellakhder, H [1 ]
Outzourhit, A [1 ]
Ameziane, EL [1 ]
机构：
[1] Fac Sci Semlalia, Lab Phys Solides & Couches Mines, Marrakech 40000, Morocco
来源：
THIN SOLID FILMS | 2001年 / 382卷 / 1-2期
关键词：
thin films; II-VI; ZnTe; r.f; sputtering;
D O I：
10.1016/S0040-6090(00)01697-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnTe thin films were prepared by cathodic r.f.-sputtering from a single high purity ZnTe target. The deposition rate increases with sputtering power. The ZnTe films deposited at 50 W were not well crystallized. The crystallization improves upon increasing the deposition power. Particularly, the films deposited using a power between 200 and 350 W, have a long-wavelength refractive index of 2.55 and a band gap energy of 2.26 eV. Furthermore, the as-deposited films are highly resistive and their resistance presents an activation energy of 0.48 eV in the temperature range 240 to 300 K. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：30 / 33
页数：4
相关论文
共 50 条
  • [1] Effects of sputtering condition on thin films deposited by r.f. sputtering with a polyimide target
    Uemura A.
    Tanabe T.
    Iwamori S.
    [J]. IEEJ Transactions on Fundamentals and Materials, 2010, 130 (02) : 147 - 154
  • [2] Characterization of HfBx films deposited by R.F. diode and R.F. magnetron sputtering
    Lee, W.Y.
    Olive, G.
    Sequeda, F.
    Deline, V.
    Huang, T.
    Gorman, G.
    Chung, D.W.
    [J]. Thin Solid Films, 1988, 166 : 131 - 138
  • [3] Performances presented by zinc oxide thin films deposited by r.f. magnetron sputtering
    Nunes, P
    Costa, D
    Fortunato, E
    Martins, R
    [J]. VACUUM, 2002, 64 (3-4) : 293 - 297
  • [4] Optical investigation of silicon nitride thin films deposited by r.f. magnetron sputtering
    Xu, G
    Jin, P
    Tazawa, M
    Yoshimura, K
    [J]. THIN SOLID FILMS, 2003, 425 (1-2) : 196 - 202
  • [5] Characterization of zirconia films deposited by r.f. magnetron sputtering
    Amor, S.B.
    Rogier, B.
    Baud, G.
    Jacquet, M.
    Nardin, M.
    [J]. Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 1998, B57 (01): : 28 - 39
  • [6] Effect of a r.f. antenna on carbon nitride films deposited by ionized r.f. magnetron sputtering
    Angleraud, B
    Mubumbila, N
    Tessier, R
    [J]. DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 1093 - 1097
  • [7] A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering
    Horng, RH
    Wuu, DS
    Wei, SC
    Chan, SH
    Kung, CY
    [J]. THIN SOLID FILMS, 1999, 343 : 642 - 645
  • [8] Elaboration, characterization and dielectric properties study of amorphous alumina thin films deposited by r.f. magnetron sputtering
    Segda, BG
    Jacquet, M
    Besse, JP
    [J]. VACUUM, 2001, 62 (01) : 27 - 38
  • [9] Characterizations of ZnO thin films deposited onto langasite substrates by r.f. magnetron sputtering
    Yang, Ping-Feng
    Wen, Hua-Chiang
    Jian, Sheng-Rui
    Lail, Yi-Shao
    Wu, Sean
    Chen, Rong-Sheng
    [J]. 2007 INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERS, 2007, : 184 - +
  • [10] Effect of oxygen to argon ratio on the properties of thin SiOx films deposited by r.f. sputtering
    J. M. Terrazas
    N. Nedev
    E. Manolov
    B. Valdez
    D. Nesheva
    M. A. Curiel
    R. Haasch
    I. Petrov
    [J]. Journal of Materials Science: Materials in Electronics, 2010, 21 : 481 - 485
12345