A power combined W-band HBT oscillator

被引：0

作者：

Uchida, K ^{[1
]}

Matsuura, H ^{[1
]}

Yakihara, T ^{[1
]}

Kobayashi, S ^{[1
]}

Oka, S ^{[1
]}

Fujita, T ^{[1
]}

Miura, A ^{[1
]}

机构：

[1] Teratec Corp, Musashino, Tokyo 1808750, Japan

来源：

2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the development of a power combined W-band heterojunction bipolar transistor (HBT) oscillator is reported. The oscillation frequency is 105.9 GHz, and the output power is +0.6 dBm, with a phase noise of -88 dBc/Hz at 1 MHz offset. We believe this is the first report of a W-band fundamental mode power combined oscillator.

引用

页码：51 / 54

页数：4

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