A 2.5-GHz 8.9-dBm IIP3 current-reused LNA in 0.18-μm CMOS technology

被引：0
|
作者：
Dai, Ruofan [1 ]
Zheng, Yunlong [1 ]
He, Jun
Kong, Weiran
Zou, Shichang [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai, Peoples R China
来源：
2014 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT): SILICON TECHNOLOGY HEATS UP FOR THZ | 2014年
关键词：
Current-reused; Bulk-bias control; Modified derivative superposition technique; LNA; LOW-NOISE AMPLIFIER; MULTIPLE GATED TRANSISTORS; LOW-POWER; DESIGN; TOPOLOGY;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A 2.5-GHz low power high gain and high linearity CMOS low noise amplifier (LNA) is presented. The modified derivative superposition (MDS) technique is employed to improve the linearity performance. The bulkbias control of auxiliary transistor (AT) in MDS technique is used to extend the AT's bias control range. The current-reused topology is utilized to full-fill the low power consumption and high gain simultaneously. The proposed LNA is fabricated in a 0.18-um 1P3M RF CMOS process and consumes a 4.36-mA quiescent current from a 1V voltage supply. The measurement results show that the proposed LNA achieves 20.1dB power gain, 1.44dB NF, 17.5- dB input P1dB, 8.9-dBm IIP3, 26.4-dB and 20.9-dB input and output return loss, respectively.
引用
收藏
页数：3
相关论文
共 46 条
  • [1] Design of a 5.7 GHz 0.18 μm CMOS current-reused LNA for an 802.11a WLAN receiver
    Li, LH
    Chuang, HR
    [J]. MICROWAVE JOURNAL, 2004, 47 (02) : 132 - 136
  • [2] A 4 mW Current-Reused WiMAX LNA with Resistance-Feedback Topology in 0.18 μm CMOS
    Wu, Chang-Hsi
    Chou, Hung-Ting
    Lyu, Yan-Gu
    [J]. 2010 ASIA-PACIFIC MICROWAVE CONFERENCE, 2010, : 370 - 373
  • [3] A 2 GHz high IIP3 down-conversion mixer in 0.18μm CMOS
    Alam, SK
    DeGroat, J
    [J]. 2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, : 194 - +
  • [4] A 0.2-2.5GHz Resistive Feedback LNA with Current Reuse Transconductance Boosting Technique in 0.18-μm CMOS
    Luo, Lei
    Li, Zhiqun
    Cheng, Guoxiao
    He, Xiaodong
    He, Boyong
    [J]. PROCEEDINGS OF THE 2017 IEEE 15TH STUDENT CONFERENCE ON RESEARCH AND DEVELOPMENT (SCORED), 2017, : 424 - 427
  • [5] A 2GHz 16dBm IIP3 low noise amplifier in 0.25μm CMOS technology
    Youn, YS
    Chang, JH
    Koh, KJ
    Lee, YJ
    Yu, HK
    [J]. 2003 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE: DIGEST OF TECHNICAL PAPERS, 2003, 46 : 452 - +
  • [6] A 2 GHz 20 dBm IIP3 Low-Power CMOS LNA with Modified DS Linearization Technique
    Rastegar, Habib
    Lim, Jae-Hwan
    Ryu, Jee-Youl
    [J]. JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2016, 16 (04) : 443 - 450
  • [7] 9.1 dBm IIP3 36 dB GAIN CONTROLLABLE LNA FOR WCDMA IN 0.13-μm CMOS
    Phan, Tuan Anh
    Farrell, Ronan
    Lee, Sang-Gug
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2009, 51 (05) : 1385 - 1388
  • [8] A Fully Integrated LNA for 3-5 GHz UWB Wireless Applications in 0.18-μm CMOS Technology
    Duan, Jihai
    Wang, Zhigong
    Li, Zhiqun
    [J]. ISAPE 2008: THE 8TH INTERNATIONAL SYMPOSIUM ON ANTENNAS, PROPAGATION AND EM THEORY, PROCEEDINGS, VOLS 1-3, 2008, : 1262 - 1265
  • [9] A DC-2.5GHz Voltage Variable Attenuator in 0.18-μm CMOS Technology
    Abdalla, I. L.
    Allam, A.
    Pokharel, R.
    Jia, H.
    [J]. 2014 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS), 2014, : 352 - 355
  • [10] A 600 mV +20 dBm IIP3 CMOS LNA with gm smoothening auxiliary path for 2.4 GHz wireless applications
    Rao, D. Sharath Babu
    Sumalatha, V.
    [J]. International Journal of Innovative Computing and Applications, 2022, 13 (03) : 127 - 137
12345