The electrical properties of Al/Ni/Ge/n-GaAs interfaces

被引：0
|
作者：
Davida, L
Kovacs, B
Mojzes, I
Kincses, Z
Dobos, L
机构：
[1] Kando Kalman Polytech, Inst Microelect & Technol, H-1084 Budapest, Hungary
[2] Tech Univ Budapest, Dept Elect Technol, H-1521 Budapest, Hungary
[3] Tu Budapest Z Bay Fdn Appl Res, Dept Elect Technol, H-1116 Budapest, Hungary
[4] Hungarian Acad Sci, Tech Phys Res Inst, H-1521 Budapest, Hungary
来源：
MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 05期
关键词：
D O I：
10.1016/S0026-2714(97)00218-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An Al(130 nm)/Ni(30 nm)/Ge(40 nm) layer deposited onto n-type GaAs by thermal evaporation was electrically studied. The electrical properties of these contacts were characterized by current-voltage curves and contact noise measurements. The samples have been annealed for different times at different temperatures in flowing forming gas, H-2:N-2 (50%:95%), in a tube furnace. The I-V characteristics of the AlNiGe samples annealed at different temperatures show Schottky character. The I-V plots of the samples that had high noise indexes show a double slope structure. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：787 / 793
页数：7
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