Statistical leakage estimation of double gate FinFET devices considering the width quantization property

被引：13
|
作者：
Gu, He [1 ]
Keane, John [1 ]
Sapatnekar, Sachin [1 ]
Kim, Chris H. [1 ]
机构：
[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
来源：
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2008年 / 16卷 / 02期
关键词：
circuit modeling; integrated circuit (IC) design; leakage currents;
D O I：
10.1109/TVLSI.2007.909809
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives a precise estimation with an error less than 5%. Design example on subthreshold circuits shows the effectiveness of the proposed method.
引用
收藏
页码：206 / 209
页数：4
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