Design of a broadband GaN Power Amplifier

被引：0
|
作者：
Li Yuchao [1 ]
Zhong Shichang [1 ]
Lu Wei [1 ]
机构：
[1] Nanjing Elect Devices Inst, Naning 211111, Peoples R China
来源：
2018 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT2018) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a new GaN broadband and internally matched power amplifier. The coexistent technology of L-section multisession transformer and negative feedback is used. Using one 3.6 mm power GaN HEMT die, made by Nanjing Electronic Devices Institute. The amplifier demons rates an output power of more than 40dBm with a power gain of over 12.5 dB and relative wideband of 148% and the typical PAE of 40% across the band of 0.3-2.0GHz.
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页数：3
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