Solution processed IZTO thin film transistor on silicon nitride dielectric layer

被引：11

作者：

Kim, Bong-Jin ^{[1
]}

Kim, Hyung-Jun ^{[1
]}

Yoon, Tae-Sik ^{[2
]}

Kim, Yong-Sang ^{[2
]}

Lee, Doo-Hyoung ^{[3
]}

Choi, Youngmin ^{[3
]}

Ryu, Byung-Hwan ^{[3
]}

Lee, Hyun Ho ^{[1
]}

机构：

[1] Myongji Univ, Dept Chem Engn, Gyeonggi 449728, South Korea

[2] Myongji Univ, Dept Nano Sci & Engn, Gyeonggi 449728, South Korea

[3] KRICT, Adv Mat Div, Taejon 305600, South Korea

来源：

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY | 2011年 / 17卷 / 01期

关键词：

Indium-zinc-tin oxide; TFT; Silicon nitride;

D O I：

10.1016/j.jiec.2010.12.003

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Solution process-based inorganic indium-zinc-tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600 degrees C on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) dielectric layer. The spin-coated indium-zinc-tin oxide (IZTO) transistor has a field-effect mobility of 4.36 cm(2)/V s with on/off ratio of 10(5) having the subthreshold voltage shift of 0.537 V/dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices. (C) 2011 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.

引用

页码：96 / 99

页数：4

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