A SPICE model of realistic single-electron transistors and its application to multiple-valued logic

被引:0
|
作者
Song, KW [1 ]
Kim, KR
Lee, JD
Park, BG
Lee, SH
Kim, DH
机构
[1] Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[3] Samsung Elect Co Ltd, Semicond Device Solut Div, Yongin 449711, South Korea
关键词
single-electron transistor(SET); SPICE; mutiple-valued logics(MVLs);
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A SPICE (simulation program with integrated circuit emphasis) model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs and was implemented into a conventional circuit simulator. In the proposed model, the SET current calculated using an analytic model is combined with the parasitic MOSFET (metal-oxide semiconductor field effect transistor) characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. An extensive comparison leads to good agreement with a reasonable level of accuracy, whre divergent physical phenomena, such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias, are considered. Employing the SET SPICE model, we confirmed the feasibility of CMOS (complementary metal-oxide semiconductor)/SET hybrid multiple-valued logics (MVLs). A periodic binary converter with a proposed complementary self-biasing scheme showed improved characteristics in terms of stability and performance.
引用
收藏
页码:121 / 124
页数:4
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