Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?

被引：8

作者：

Flynn, JS ^{[1
]}

Xin, H ^{[1
]}

Dion, JA ^{[1
]}

Hutchins, EL ^{[1
]}

Antunes, H ^{[1
]}

Fieschi-Corso, L ^{[1
]}

Van Egas, R ^{[1
]}

Brandes, GR ^{[1
]}

机构：

[1] ATMI, Danbury, CT 06810 USA

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303313

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The electrical characteristics of delta doped HEMTs were measured using C-V, Lehighton sheet resistance and 300degreesK Hall mobility techniques. Spacer layer thickness and dopant concentration were found to have a significant impact on the election mobility and electron gas carrier density in the 2DEG. The product mu-N-s of delta doped HEMTs can be optimized by varying the position of the delta doped layer and the dopant concentration to develop HEMT devices with high transconductance. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2327 / 2330

页数：4

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