Resistive switching effect in the n-InGaAs/GaAs heterostructures with double tunnel-coupled quantum wells

被引：1

作者：

Belevskii, P. A. ^{[1
]}

Vinoslavskii, M. N. ^{[1
]}

Vainberg, V. V. ^{[1
]}

Pylypchuk, O. S. ^{[1
]}

Poroshin, V. N. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev, Ukraine

来源：

LOW TEMPERATURE PHYSICS | 2022年 / 48卷 / 02期

关键词：

semiconductor heterostructures; coupled quantum wells; impurity band;

D O I：

10.1063/10.0009296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electric conductivity behavior in the single and double tunnel-coupled quantum wells (QW) with different doping profile caused by the impact of short pulses of the strong longitudinal (in the quantum wells plane) electric field has been investigated. It is established that at low temperatures (4 K) after such an impact the long-term metastable state with increased electric conductance may be observed in the case of the asymmetric QW couple with the impurity delta shaped-layer in the narrower QW. It is not observed in the structures with other configurations. The observed effect is explained by the model accounting for metastable changes in the electron energy states spectrum in the studied structures caused by the strong electric field pulses.

引用

页码：157 / 160

页数：4

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