Acoustical plasma oscillations in photoexcited electron-hole plasma induced in GaAs layers embedded with InAs quantum dots

被引：3
|
作者：
Bairamov, BH [1 ]
Voitenko, VA
Toporov, VV
Zakharchenya, BP
Henini, M
Kent, AJ
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, Dept Solid State Phys, St Petersburg 194021, Russia
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
NANOTECHNOLOGY | 2000年 / 11卷 / 04期
关键词：
D O I：
10.1088/0957-4484/11/4/324
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present, to our knowledge, the first experimental evidence for the existence of acoustical plasma oscillations in photoexcited electron-hole plasma observed in resonant quasielastic electronic light scattering spectra in the near-infrared spectral range in a GaAs matrix embedded with self-assembled InAs quantum dots.
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页码：314 / 317
页数：4
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