Optical response and magnetic moment of MoS2 material

被引:19
|
作者
Bouarissa, Asma [1 ]
Gueddim, Ahmed [2 ]
Bouarissa, Nadir [3 ]
Maghraoui-Meherz, Hager [1 ]
机构
[1] Univ Tunis El Manar, Fac Sci Tunis, Lab Chim Analyt & Electrochim, LR99Es15, Tunis 2092, Tunisia
[2] Univ Djelfa, Mat Sci & Informat Lab, Fac Sci, Djelfa 17000, Algeria
[3] Univ Msila, Lab Mat Phys & Its Applicat, Msila 28000, Algeria
来源
OPTIK | 2020年 / 208卷
关键词
Optical properties; Magnetic properties; MoS2; Photovoltaics; Microelectronics; THIN-FILMS; OPTOELECTRONIC PROPERTIES; ELECTRONIC-STRUCTURE; REFRACTIVE-INDEX; ENERGY GAPS; CONSTANTS; 1ST-PRINCIPLES; PERFORMANCE; PRESSURE;
D O I
10.1016/j.ijleo.2019.164080
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The present contribution deals with the optical spectra and magnetic moment of MoS2 material in the hexagonal structure. The calculations are performed using spin-polarized full-potential linearized augmented-plane-wave method. The generalized gradient approximation with the modified Becke-Johnson correction is employed so as to describe the exchange-correlation potential. The optical spectra are presented along both x and z axes. The spectra show an anisotropic character between the two directions of interest. Our findings illustrates that the prominent peaks in the electron energy-loss spectrum correspond to the reduction of the reflectivity spectra. The optical properties show a good optical absorption and conductivity in the visible range. The total magnetic moment for the whole unit cell of MoS2 material is found to be 1.87 mu B. The effect of changing the spin channel on all optical features being studied here is found to be negligible. The information derived from the present investigation show that MoS2 material can be a promising candidate for photovoltaic and microelectronics devices applications.
引用
收藏
页数:6
相关论文
共 50 条
  • [31] Magnetic Properties of the Electrons in MoS2 Monolayer
    V. V. Karpunin
    V. A. Margulis
    [J]. Semiconductors, 2020, 54 : 1666 - 1669
  • [32] Magnetic Properties of the Electrons in MoS2 Monolayer
    Karpunin, V. V.
    Margulis, V. A.
    [J]. SEMICONDUCTORS, 2020, 54 (12) : 1666 - 1669
  • [33] Magnetic properties of MoS2: Existence of ferromagnetism
    Tongay, Sefaattin
    Varnoosfaderani, Sima S.
    Appleton, Bill R.
    Wu, Junqiao
    Hebard, Arthur F.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (12)
  • [34] Orbital magnetic susceptibility of graphene and MoS2
    Gutierrez-Rubio, A.
    Stauber, T.
    Gomez-Santos, G.
    Asgari, R.
    Guinea, F.
    [J]. PHYSICAL REVIEW B, 2016, 93 (08)
  • [35] Is MoS2 a robust material for 2D electronics?
    Lorenz, Tommy
    Ghorbani-Asl, Mahdi
    Joswig, Jan-Ole
    Heine, Thomas
    Seifert, Gotthard
    [J]. NANOTECHNOLOGY, 2014, 25 (44)
  • [36] Preparation, modification and nonlinear optical properties of semiconducting MoS2 and MoS2/ZnO composite film
    Liu, Hai-Quan
    Yao, Cheng-Bao
    Jiang, Cai-Hong
    Wang, Xue
    [J]. OPTICS AND LASER TECHNOLOGY, 2021, 138
  • [37] Electronic Structure of Twisted Bilayers of Graphene/MoS2 and MoS2/MoS2
    Wang, Zilu
    Chen, Qian
    Wang, Jinlan
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (09): : 4752 - 4758
  • [38] Monolayers of MoS2 as an oxidation protective nanocoating material
    Sen, H. Sener
    Sahin, H.
    Peeters, F. M.
    Durgun, E.
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 116 (08)
  • [39] Fluorographane: a promising material for bipolar doping of MoS2
    Cakir, Deniz
    Peeters, Francois M.
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (41) : 27636 - 27641
  • [40] Bending response of single layer MoS2
    Xiong, Si
    Cao, Guoxin
    [J]. NANOTECHNOLOGY, 2016, 27 (10)