Mechanical properties of PbTe-based thermoelectric semiconductors

被引：142
|
作者：
Gelbstein, Y. [1 ]
Gotesman, G. [1 ]
Lishzinker, Y. [1 ]
Dashevsky, Z. [1 ]
Dariel, M. P. [1 ]
机构：
[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
来源：
SCRIPTA MATERIALIA | 2008年 / 58卷 / 04期
关键词：
semiconductor compounds; mechanical properties; hardness; electrical properties; lead telluride;
D O I：
10.1016/j.scriptamat.2007.10.012
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper is concerned with the mechanical properties of PbTe and Pb1-xSnxTe compounds and their correlation with the respective charge carrier concentrations. Single-crystals and samples prepared by powder metallurgy display similar general trends. It was found that although there is a similar electronic behavior (constant scattering factor of -0.5) for the various compositions examined, the mechanical properties of the compounds are completely different. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：251 / 254
页数：4
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