Simulations for structural properties and crystal growth on Si(001) surface

被引：3
|
作者：
Terakura, K [1 ]
Uda, T [1 ]
Yamasaki, T [1 ]
Miyazaki, T [1 ]
机构：
[1] JOINT RES CTR ATOM TECHNOL, ANGSTROM TECHNOL PARTNERSHIP, TSUKUBA, IBARAKI 305, JAPAN
来源：
SURFACE SCIENCE | 1996年 / 357卷 / 1-3期
关键词：
density functional calculations; growth; low index single crystal surfaces; molecular beam epitaxy; semiconducting surfaces; silicon; surface defects; surface diffusion;
D O I：
10.1016/0039-6028(96)00187-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Novel structure models for the so-called C-type defect on Si(001) surfaces are proposed, The key idea in the models is a missing Si atom in the, second surface layer, The proposed models are locally very stable and give STM images consistent with the observed one, The second subject is the analysis on the initial processes of the homoepitaxial crystal growth on Si(001) surfaces. The stability of several ad-Si atom clusters and the activation energies for some elementary processes are discussed.
引用
收藏
页码：394 / 401
页数：8
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